Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen

Soh, Wee Chen (2018) Formation of germanium oxynitride as buffer layer on germanium substrate / Soh Wee Chen. Masters thesis, University Of Malaya.

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      Thermal oxynitridation process was used to grow germanium oxynitride, GeON thin films as a buffer layer on the germanium substrates in nitrous oxide (N2O) gas ambient at several temperatures: 400 °C, 500 °C and 600 °C. The physical and chemical properties of the buffer layers formed were characterized and investigated using X-ray diffraction (XRD) and Fourier transform infrared (FTIR). The XRD patterns showed the crystallinities that belongs to the germanium dioxide (GeO2), gamma-germanium nitride (γ-Ge3N4) and digermanium dinitrogen oxide (Ge2N2O). Digermanium dinitrogen oxide was formed at 600 °C and its peaks were detected at 31.58° and 65.92° corresponding to planes (110) and (220) respectively in XRD pattern. Meanwhile, peaks indicating the presence of germanium oxide and gamma-germanium nitride were found in XRD pattern for all the samples. GeO2 were detected in XRD patterns at 28.9°, 35.5°, 42.6° and 47.0° corresponding to (110), (111), (200) and (210). γ–Ge3N4 were also found in the XRD patterns at 38.83°, 47.97° corresponding to planes (110), (111). FTIR detected the Ge2N2O absorption peak at 800 cm-1 at 600 °C sample, thus confirming the formation of Ge2N2O on the germanium substrate at 600 °C.

      Item Type: Thesis (Masters)
      Additional Information: Research Report (M.A.) - Faculty of Engineering, University of Malaya, 2018.
      Uncontrolled Keywords: Gate oxides; Buffer layer; Germanium oxynitride; Passivation; Thermal oxynitridation
      Subjects: T Technology > T Technology (General)
      Divisions: UNSPECIFIED
      Depositing User: Mrs Rafidah Abu Othman
      Date Deposited: 01 Apr 2019 06:15
      Last Modified: 01 Jul 2021 03:44

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