Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai

Sivanathan , Pariasamy @ Chelladurai (2018) Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai. Masters thesis, University of Malaya.

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      Abstract

      The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission via metal-organic chemical vapor deposition (MOCVD). The homoepitaxy growth of GaN-on-GaN gives an unprecedented high performance with low defect density, high-quality crystal, simplified LED architectures (short process flow) and overall lower cost. The optimizations of InGaN/GaN MQWs on n-type GaN substrate for blue emission at 445-455 nm range were carried out. The high quality 6 pairs of multi-quantum wells with InGaN quantum wells and GaN quantum barriers were grown at different temperatures (650�to 780�). The lowest defect density demonstrated at 1.3�107 cm

      Item Type: Thesis (Masters)
      Additional Information: Dissertation (M.A.) – Faculty of Science, University of Malaya, 2018.
      Uncontrolled Keywords: Thermal conductivity; Bulk GaN substrate; Blue light emission; Heat interaction effect
      Subjects: Q Science > Q Science (General)
      Divisions: Faculty of Science
      Depositing User: Mr Mohd Safri Tahir
      Date Deposited: 30 Jan 2019 07:02
      Last Modified: 30 Jan 2019 07:02
      URI: http://studentsrepo.um.edu.my/id/eprint/9526

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